| Numéro |
J. Phys. Colloques
Volume 50, Numéro C8, Novembre 1989
36th International Field Emission Symposium
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|---|---|---|
| Page(s) | C8-103 - C8-108 | |
| DOI | https://doi.org/10.1051/jphyscol:1989818 | |
36th International Field Emission Symposium
J. Phys. Colloques 50 (1989) C8-103-C8-108
DOI: 10.1051/jphyscol:1989818
Department of Physical Electronics, Bashkir State University, 450074, Ufa, ul . Frunze, 32, USSR
J. Phys. Colloques 50 (1989) C8-103-C8-108
DOI: 10.1051/jphyscol:1989818
FIELD EMISSION CURRENT FLUCTUATIONS FROM SEMICONDUCTORS : SURFACE AND BULK EFFECTS
R.Z. BAKHTIZIN et S.S. GHOTSDepartment of Physical Electronics, Bashkir State University, 450074, Ufa, ul . Frunze, 32, USSR
Abstract
The field emission current fluctuation spectra from p-type Si have been measured in the 0.02 - 1000 Hz frequency range. From a detailed numerical analysis of the spectra at 77 K and 300 K the values of thermoactivation energy were obtained for the space charge region of a semiconductor.