Numéro
J. Phys. Colloques
Volume 50, Numéro C6, Juin 1989
Beam Injection Assessment of Defects in Semiconductors
International Workshop
Page(s) C6-185 - C6-185
DOI https://doi.org/10.1051/jphyscol:1989639
Beam Injection Assessment of Defects in Semiconductors
International Workshop

J. Phys. Colloques 50 (1989) C6-185-C6-185

DOI: 10.1051/jphyscol:1989639

DOPING PROFILE INSPECTION IN SILICON BY LOW ACCELERATION VOLTAGE SEM-EBIC

R. KUHNERT

Siemens AG, Research laboratories, D-8000 München 83, F.R.G.


Abstract
EBIC micrographs of sectional planes are a common tool for the delineation of p/n-junctions. The EBIC contrast has been interpreted based on models originating from van Roosbroeck /1/ in which the specimen is characterized by a recombination velocity at the sectional plane and a bulk recombination parameter (e.g. the minority carrier diffusion length).