J. Phys. Colloques
Volume 50, Numéro C6, Juin 1989Beam Injection Assessment of Defects in Semiconductors
|Page(s)||C6-176 - C6-176|
J. Phys. Colloques 50 (1989) C6-176-C6-176
HOLE-DIFFUSION LENGTH AND TRANSPORT PARAMETERS OF THIN CDS FILMS FROM A SCHOTTKY BARRIERJ. EBOTHE
Institut Lebel, Université Louis Pasteur, 4, rue Blaise Pascal, F-67000 Strasbourg, France
The minority carrier diffusion length of semiconductor thin films in polycrystalline form is determined with a good precision by EBIC and LBIC techniques. The electron or laser beam used is scanned across the junction. The principle applied in these cases might be attractive for the semiconducting hand side of liquid Schottky barriers. However, these techniques cannot be easily used for such junctions. The methods based on the Gardner approach remain so far more convenient here, especially when very thin films are concerned. In this context, two independent techniques, namely, the surface photovoltage ( SPV) and the photoelectrochemical measurements served in this work.