J. Phys. Colloques
Volume 50, Numéro C6, Juin 1989Beam Injection Assessment of Defects in Semiconductors
|Page(s)||C6-165 - C6-165|
J. Phys. Colloques 50 (1989) C6-165-C6-165
RECOMBINATION AT DISLOCATION LEVELS LOCATED IN THE SPACE CHARGE REGION. EBIC CONTRAST EXPERIMENTS AND THEORYJ.L. FARVACQUE et B. SIEBER
Laboratoire de Structure et Propriétés de l'Etat Solide, Bât. C6, USTLFA, F-59655 Villeneuve d'Ascq Cedex, France
Recombination at dislocations located in the space charge region (SCR) of a Schottky diode has been previously evidenced by EBIC contrats experiments  in the case of non intentionally n type CdTe. A depth-dependent recombination probability was, then, phenomenologically ascribed to the dislocation, in order to fit theoretical EBIC curves as a function of the beam accelerating voltage Eo obtained for dislocations perpendicular to the surface, with experimental ones. A variable radius ε(z) was assigned to the recombination cylinder which described the dislocation and within which the recombination efficiency was taken equal to 100%  .