| Numéro |
J. Phys. Colloques
Volume 50, Numéro C6, Juin 1989
Beam Injection Assessment of Defects in SemiconductorsInternational Workshop |
|
|---|---|---|
| Page(s) | C6-161 - C6-161 | |
| DOI | https://doi.org/10.1051/jphyscol:1989621 | |
Beam Injection Assessment of Defects in Semiconductors
International Workshop
J. Phys. Colloques 50 (1989) C6-161-C6-161
DOI: 10.1051/jphyscol:1989621
Laboratoire de Photoélectricité des Semi-Conducteurs, Faculté des Sciences et Techniques de Marseille Saint-Jérôme, Université d'Aix-Marseille III, F-13397 Marseille Cedex 13, France
International Workshop
J. Phys. Colloques 50 (1989) C6-161-C6-161
DOI: 10.1051/jphyscol:1989621
LBIC ANALYSIS FOR GRAIN-BOUNDARY CHARACTERIZATION IN INHOMOGENEOUS MATERIALS
H. EL GHITANILaboratoire de Photoélectricité des Semi-Conducteurs, Faculté des Sciences et Techniques de Marseille Saint-Jérôme, Université d'Aix-Marseille III, F-13397 Marseille Cedex 13, France
Abstract
The interfacial recombination velocity S of Grain-Boundaries (G.B.'s) may be evaluated by means of LBIC scan line at wavelength λ ≥ 940 nm using a finite diameter light spot. ZOOK /1/ has proposed a method to determine S, based on the photocurrent attenuation within a G.B., assuming that the minority carrier diffusion length L in the grains is constant. This assumption is not experimentally verified and causes large errors in the S evaluation.