J. Phys. Colloques
Volume 50, Numéro C6, Juin 1989Beam Injection Assessment of Defects in Semiconductors
|Page(s)||C6-145 - C6-150|
J. Phys. Colloques 50 (1989) C6-145-C6-150
PROBLEMS ASSOCIATED WITH MODELLING OF RECOMBINATION AT DEFECTS, TEMPERATURE DEPENDENCE OF EBIC AND CLA. JAKUBOWICZ
Weizmann Institute of Science, Departement of Structural Chemistry, 76100 IL-Rehovot, Israel
Two trends can be distinguished in the literature on beam injection methods associated with recombination at defects. The first treats the defect mainly as a "black box" which is described by a global parameter characterizing its electronic behaviour, such as the recombination velocity at a grain boundary, the capture radius of a dislocation, etc.. The second one attempts to give a direct insight into the physical processes at defects.