| Numéro |
J. Phys. Colloques
Volume 49, Numéro C5, Octobre 1988
Interface Science and Engineering '87An International Conference on the Structure and Properties of Internal Interfaces |
|
|---|---|---|
| Page(s) | C5-245 - C5-250 | |
| DOI | https://doi.org/10.1051/jphyscol:1988527 | |
Interface Science and Engineering '87
An International Conference on the Structure and Properties of Internal Interfaces
J. Phys. Colloques 49 (1988) C5-245-C5-250
DOI: 10.1051/jphyscol:1988527
1 Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853, U.S.A.
2 Applied Solar Energy Corporation, 15251 E. Don Julian Road, PO Box 1212, City of Industry, CA 91749, U.S.A.
An International Conference on the Structure and Properties of Internal Interfaces
J. Phys. Colloques 49 (1988) C5-245-C5-250
DOI: 10.1051/jphyscol:1988527
GRAIN BOUNDARIES AND ANTIPHASE BOUNDARIES IN GaAs
N.-H. CHO1, S. McKERNAN1, D.K. WAGNER2 et C.B. CARTER11 Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853, U.S.A.
2 Applied Solar Energy Corporation, 15251 E. Don Julian Road, PO Box 1212, City of Industry, CA 91749, U.S.A.
Abstract
Bicrystals of GaAs with a predetermined orientation relationships between the grains have been produced by growing GaAs epilayers on substrates cut from Czochralski-grown germanium bicrystals. Grain boundaries have also been generated in GaAs epilayers grown on (110) Ge substrate. In this report, an extensive study of such interfaces is illustrated by a transmission electron microscopy (TEM) study of the atomic structure of first-, second- and third-order twin boundaries. Antiphase boundaries (APBs) have also been produced in GaAs epilayers grown epitactically on Ge substrates. Both the structure of these interfaces and the interactions of the APBs with grain boundaries and lattice dislocations have been examined using TEM.