| Numéro |
J. Phys. Colloques
Volume 48, Numéro C6, Novembre 1987
34th International Field Emission Symposium / 34ème Symposium International d'Emission de Champ
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| Page(s) | C6-379 - C6-384 | |
| DOI | https://doi.org/10.1051/jphyscol:1987662 | |
34th International Field Emission Symposium / 34ème Symposium International d'Emission de Champ
J. Phys. Colloques 48 (1987) C6-379-C6-384
DOI: 10.1051/jphyscol:1987662
Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, U.S.A.
J. Phys. Colloques 48 (1987) C6-379-C6-384
DOI: 10.1051/jphyscol:1987662
DIRECT OBSERVATION OF BORON SEGREGATION TO LINE AND PLANAR DEFECTS IN Ni3Al
M.K. Miller et J.A. HortonMetals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, U.S.A.
Abstract
The atom probe field-ion microscope has been used to characterize the distribution of boron in nickel aluminides near the stoichiometric Ni3Al composition. Boron has been found to segregate to all line and planar defects and a thin boron-enriched phase was observed on high angle grain boundaries in substoichiometric (< 25 at. % Al) materials. Boron clustering was detected in the stoichiometric and superstoichiometric materials.