| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-275 - C4-280 | |
| DOI | https://doi.org/10.1051/jphyscol:1988457 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-275-C4-280
DOI: 10.1051/jphyscol:1988457
1 Electronics and Communications Department, Cairo University, Guiza, Egypt
2 Interuniversity Microelectronics Center, Kapeldreef 75, B-3030 Heverlee, Belgium
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-275-C4-280
DOI: 10.1051/jphyscol:1988457
BAND-TAIL SHOCKLEY-READ-HALL RECOMBINATION IN HEAVILY DOPED SILICON
M.Y. GHANNAM1, R.P. MERTENS2, S.C. JAIN2, J.F. NIJS2 et R. VAN OVERSTRAETEN21 Electronics and Communications Department, Cairo University, Guiza, Egypt
2 Interuniversity Microelectronics Center, Kapeldreef 75, B-3030 Heverlee, Belgium
Résumé
La densité des centres de recombinaison type Shockley-Read-Hall due aux états localisés situés dans le prolongement de la bande des porteurs minoritaires a été calculée pour le silicium fortement dopé. Nous prouvons que l'effet de ces états devient dominant pour des concentrations de dopage supérieur à 1017 cm-3.
Abstract
Shockley-Read-Hall recombination center density due to the localized states in the minority carrier band tail has been calculated. It is shown that in heavily doped silicon, the effect of these band tail states is comparable to or more important than that due to deep states and modifies the lifetime of minority carriers significantly.