| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-201 - C4-204 | |
| DOI | https://doi.org/10.1051/jphyscol:1988441 | |
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-201-C4-204
DOI: 10.1051/jphyscol:1988441
OUTPUT IMPEDANCE FREQUENCY DISPERSION AND LOW FREQUENCY NOISE IN GaAs MESFETs
D. GITLIN, C.R. VISWANATHAN et A.A. ABIDIElectrical Engineering Department, University of California, Los Angeles, CA 90024, U.S.A.
Résumé
L'investigation traite de la relation entre bruit g-r et la dispersion de fréquence de l'impédance de sortie GaAs MESFET. On a employé une nouvelle technique pour l'identification des niveaux profonds qui sont responsables du bruit et de la dispersion. La dépendance du biais de la dispersion fut également investiguée et un modèle constant aux simulations en deux dimensions est présenté.
Abstract
The interrelation between g-r noise and output impedance frequency dispersion in GaAs MESFET's has been investigated. A new technique to identify the deep levels responsible for the dispersion is used. It is found that same traps are responsible for both noise and dispersion. The bias dependence of the dispersion was also investigated and a model is presented which is consistent with 2-D simulations.