| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-153 - C4-156 | |
| DOI | https://doi.org/10.1051/jphyscol:1988430 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-153-C4-156
DOI: 10.1051/jphyscol:1988430
Electrical Engineering Department, University of Minnesota, Minneapolis, MN 55455, U.S.A.
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-153-C4-156
DOI: 10.1051/jphyscol:1988430
ACCELERATION 1/F NOISE IN SILICON MOSFETs
A.N. BIRBAS, Q. PENG, A. VAN DER ZIEL et A.D. VAN RHEENENElectrical Engineering Department, University of Minnesota, Minneapolis, MN 55455, U.S.A.
Abstract
It is usually assumed that the 1/f noise in Si-MOSFETs is limited by collision 1/f noise. We found this to be the case for devices with relatively short channel lengths (L<10µm) but for channels of intermediate length (10µm<L<194µm) we found that the Hooge parameter varies as L2. We attributed this to acceleration of the electrons by the applied field, accompanied by Bremsstrahlung emission and current 1/f noise generation. This is a new noise source.