| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-677 - C4-680 | |
| DOI | https://doi.org/10.1051/jphyscol:19884142 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-677-C4-680
DOI: 10.1051/jphyscol:19884142
SGS-Thomson Microelectronics, Via C. Olivetti 2, Agrate Brianza (MI), Italy
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-677-C4-680
DOI: 10.1051/jphyscol:19884142
SPICE MODEL FOR TRANSIENT ANALYSIS OF EEPROM CELLS
R. BEZ, D. CANTARELLI, P. CAPPELLETTI et F. MAGGIONISGS-Thomson Microelectronics, Via C. Olivetti 2, Agrate Brianza (MI), Italy
Abstract
An equivalent model for the EEPROM cell, described on a SPICE circuit analyzer, is used for the transient analysis of erase(E)/write(W) characteristics with ramp waveform programming pulses. The results of the simulation are compared with the experimental data obtained by an innovative method for measuring E/W curves. The validation of the model is made over different variations of the cell lay-out, different programming voltages and different rise times for the ramp of the programming pulse.