| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-597 - C4-606 | |
| DOI | https://doi.org/10.1051/jphyscol:19884126 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-597-C4-606
DOI: 10.1051/jphyscol:19884126
Siemens AG, Corporate Research and Development, Microelectronics, Otto-Hahn-Ring 6, D-8000 München, F.R.G.
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-597-C4-606
DOI: 10.1051/jphyscol:19884126
THE HOT-ELECTRON PROBLEM IN SUBMICRON MOSFET
W. HÄNSCH, M. ORLOWSKI et W. WEBERSiemens AG, Corporate Research and Development, Microelectronics, Otto-Hahn-Ring 6, D-8000 München, F.R.G.
Abstract
A review of the hot electron problem in MOSFET is given. This includes : Key experimental features, the problem of modelling hot carrier transport in Si and SiO2 after injection into the oxide, and an evaluation of technological measures to obtain hot carrier resistant structures.