| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-587 - C4-590 | |
| DOI | https://doi.org/10.1051/jphyscol:19884124 | |
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-587-C4-590
DOI: 10.1051/jphyscol:19884124
PHOTOVOLTAIC INFRARED SENSOR ARRAY IN HETEROEPITAXIAL NARROW GAP LEAD-CHALCOGENIDES ON SILICON
J. MASEK1, C. MAISSEN1, H. ZOGG1, S. BLUNIER1, H. WEIBEL1, A. LAMBRECHT2, B. SPANGER2, H. BÖTTNER2 et M. TACKE21 AFIF (Industry Research Unit) at Swiss Federal Institute of Technology, ETH-Hönggerberg, CH-8093 Zürich, Switzerland
2 Fraunhofer-Institut für Physikalische Messtechnik, Heidenhofstr., 8, D-7800 Freiburg, F.R.G.
Abstract
Linear arrays of photovoltaic IR-sensors for thermal imaging applications have been fabricated for the first time in narrow gap semiconductor layers grown heteroepitaxially on Si-substrates. Heteroepitaxy was achieved using intermediate stacked CaF2-BaF2 bilayers to overcome the large lattice- and thermal expansion mismatch between Si and lead-chalcogenides. Sensors fabricated in narrow gap PbTe have ≈ 5.7 µm cut-off wavelength at 90K and quantum efficiencies around 70%. Resistance-area products are up to 500 Ωcm2 with mean value of ≈ 150 Ωcm2 for 66 element linear arrays, well above the room temperature photon background noise limit. Sensor arrays with shorter cut-off wavelength were fabricated in the same manner in epitaxial Pb1-xEuxSe on fluoride covered Si-substrates.