| Numéro |
J. Phys. Colloques
Volume 48, Numéro C6, Novembre 1987
34th International Field Emission Symposium / 34ème Symposium International d'Emission de Champ
|
|
|---|---|---|
| Page(s) | C6-583 - C6-588 | |
| DOI | https://doi.org/10.1051/jphyscol:1987695 | |
J. Phys. Colloques 48 (1987) C6-583-C6-588
DOI: 10.1051/jphyscol:1987695
HIGH VOLTAGE FIELD ION MICROSCOPE, ITS DESIGN AND FIELD CALCULATION
M. Tagawa, S. Koike, N. Inoue, N. Ohmae et M. UmenoDepartment of Precision Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan
Abstract
High voltage field ion microscope with the ultimate applied voltage of 60 kV has been developed. One of the primary objectives of this study was to extend the field ion microscopy to bulk materials instead of fine metal wires or whiskers. The atomic configuration of bulk tungsten rod was imaged with He as an image gas. Preliminary study on the atomic structure of carbon fiber reinforced carbon was also carried out. In conjunction with the design and development of the high voltage field ion microscope, the electric field strength and its distribution at the tip surface were computer-simulated with a charge simulation method. It has become clear that the high voltage field ion microscope is able to provide the image from a tip whose radius of curvature is about 1 µm.