| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
|
|
|---|---|---|
| Page(s) | C5-439 - C5-442 | |
| DOI | https://doi.org/10.1051/jphyscol:1987593 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-439-C5-442
DOI: 10.1051/jphyscol:1987593
1 Department of Physics, University of Surrey, GB-Guildford GU2 5XH. Great-Britain
2 AT and T Bell Laboratories, Murray Hill, NJ 07974, U.S.A.
J. Phys. Colloques 48 (1987) C5-439-C5-442
DOI: 10.1051/jphyscol:1987593
RESONANT ZENER TUNNELING OF ELECTRONS ACROSS THE BAND-GAP BETWEEN BOUND STATES IN THE VALENCE- AND CONDUCTION-BAND QUANTUM WELLS IN A MULTIPLE QUANTUM-WELL STRUCTURE
J. ALLAM1, F. BELTRAM2, F. CAPASSO2 et A.Y. CHO21 Department of Physics, University of Surrey, GB-Guildford GU2 5XH. Great-Britain
2 AT and T Bell Laboratories, Murray Hill, NJ 07974, U.S.A.
Abstract
We report the observation of resonant tunneling effects at high applied fields in a multiple quantum-well P-I-N diode. The Al0.48In0.52As/Ga0.47In0.53As structure shows features in the dark current due to Zener tunneling of electrons from the lowest sub-band in a valence-band quantum well to the first and second sub-bands of an adjacent conduction-band well.