| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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|---|---|---|
| Page(s) | C5-317 - C5-320 | |
| DOI | https://doi.org/10.1051/jphyscol:1987568 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-317-C5-320
DOI: 10.1051/jphyscol:1987568
1 Instituto de Ciencia de Materiales, Zaragoza, Spain
2 IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, U.S.A.
3 Tokyo Institute of Technology, Tokyo, Japan
J. Phys. Colloques 48 (1987) C5-317-C5-320
DOI: 10.1051/jphyscol:1987568
RAMAN SCATTERING AND EXCITATION SPECTROSCOPY IN CdTe/CdMnTe SUPERLATTICES
L. VIÑA1, L.L. CHANG2 et J. YOSHINO31 Instituto de Ciencia de Materiales, Zaragoza, Spain
2 IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, U.S.A.
3 Tokyo Institute of Technology, Tokyo, Japan
Abstract
We have observed oscillatory structure in the excitation spectra of CdTe/CdxMN1-xTe superlattices. A comparison of these spectra with conventional Raman spectra shows that the structures correspond to first and higher order LO-phonons of the CdTe wells and the CdTe/CdxMn1-xTe barriers, as well as combination of them. A strong enhancement in Resonance Raman scattering of both the CdTe and the CdMnTe phonons, at the energy of the heavy-hole exciton of the superlattice, suggests a small valence-band offset between the two materials.