Numéro
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
Page(s) C5-317 - C5-320
DOI https://doi.org/10.1051/jphyscol:1987568
3rd International Conference on Modulated Semiconductor Structures

J. Phys. Colloques 48 (1987) C5-317-C5-320

DOI: 10.1051/jphyscol:1987568

RAMAN SCATTERING AND EXCITATION SPECTROSCOPY IN CdTe/CdMnTe SUPERLATTICES

L. VIÑA1, L.L. CHANG2 et J. YOSHINO3

1  Instituto de Ciencia de Materiales, Zaragoza, Spain
2  IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, U.S.A.
3  Tokyo Institute of Technology, Tokyo, Japan


Abstract
We have observed oscillatory structure in the excitation spectra of CdTe/CdxMN1-xTe superlattices. A comparison of these spectra with conventional Raman spectra shows that the structures correspond to first and higher order LO-phonons of the CdTe wells and the CdTe/CdxMn1-xTe barriers, as well as combination of them. A strong enhancement in Resonance Raman scattering of both the CdTe and the CdMnTe phonons, at the energy of the heavy-hole exciton of the superlattice, suggests a small valence-band offset between the two materials.