| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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|---|---|---|
| Page(s) | C5-285 - C5-288 | |
| DOI | https://doi.org/10.1051/jphyscol:1987562 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-285-C5-288
DOI: 10.1051/jphyscol:1987562
1 Central Research Laboratories, Sharp Corporation, 2613-1, Ichinomoto-cho, Tenri-shi, Nara 632, Japan
2 Electrotechnical Laboratory Miti Japan, 1-1-4, Umezono, Sakura-mura, Niihari-gun, Ibaraki, 305, Japan
J. Phys. Colloques 48 (1987) C5-285-C5-288
DOI: 10.1051/jphyscol:1987562
FLAT-BAND VOLTAGE CONTROL OF GaAs SIS DIODE USING PSEUDOMORPHICALLY GROWN InGaAs GATE
T. KINOSADA1, K. MATSUMOTO2, Y. HAYASHI2 et N. HASHIZUME21 Central Research Laboratories, Sharp Corporation, 2613-1, Ichinomoto-cho, Tenri-shi, Nara 632, Japan
2 Electrotechnical Laboratory Miti Japan, 1-1-4, Umezono, Sakura-mura, Niihari-gun, Ibaraki, 305, Japan
Abstract
We propose a method for controlling the flat-band voltage of a GaAs SIS (Semiconductor-Insulator-Semiconductor) diode in which we use InGaAs as the gate material. We examine its effectiveness by capacitance-voltage measurement. Thermal stability of InGaAs-gate SIS diode is also studied.