Numéro
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
Page(s) C5-285 - C5-288
DOI https://doi.org/10.1051/jphyscol:1987562
3rd International Conference on Modulated Semiconductor Structures

J. Phys. Colloques 48 (1987) C5-285-C5-288

DOI: 10.1051/jphyscol:1987562

FLAT-BAND VOLTAGE CONTROL OF GaAs SIS DIODE USING PSEUDOMORPHICALLY GROWN InGaAs GATE

T. KINOSADA1, K. MATSUMOTO2, Y. HAYASHI2 et N. HASHIZUME2

1  Central Research Laboratories, Sharp Corporation, 2613-1, Ichinomoto-cho, Tenri-shi, Nara 632, Japan
2  Electrotechnical Laboratory Miti Japan, 1-1-4, Umezono, Sakura-mura, Niihari-gun, Ibaraki, 305, Japan


Abstract
We propose a method for controlling the flat-band voltage of a GaAs SIS (Semiconductor-Insulator-Semiconductor) diode in which we use InGaAs as the gate material. We examine its effectiveness by capacitance-voltage measurement. Thermal stability of InGaAs-gate SIS diode is also studied.