| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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|
|---|---|---|
| Page(s) | C5-251 - C5-254 | |
| DOI | https://doi.org/10.1051/jphyscol:1987553 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-251-C5-254
DOI: 10.1051/jphyscol:1987553
CAS in Radio Physics and Electronics, 92, Acharya Prafulla Chandra Road, Calcutta-700 009, India
J. Phys. Colloques 48 (1987) C5-251-C5-254
DOI: 10.1051/jphyscol:1987553
MOBILITY OF TWO DIMENSIONAL ELECTRON GAS IN A DELTA FET
P.K. BASU et K. BHATTACHARYYACAS in Radio Physics and Electronics, 92, Acharya Prafulla Chandra Road, Calcutta-700 009, India
Abstract
The values of mobility of two dimensional electron gas in a delta doped FET are calculated by solving the Boltzmann equation by an iterative technique by considering impurity and polar optic phonon scattering. It is concluded that in the range 77-300 K impurity scattering is the most dominant process and the main contribution comes from the lowest subband.