Numéro
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
Page(s) C5-231 - C5-234
DOI https://doi.org/10.1051/jphyscol:1987548
3rd International Conference on Modulated Semiconductor Structures

J. Phys. Colloques 48 (1987) C5-231-C5-234

DOI: 10.1051/jphyscol:1987548

DIAMAGNETIC SHIFTS OF QUANTUM WELL EXCITONS IN STRONG MAGNETIC FIELDS APPLIED IN THE WELL PLANES

N.J. PULSFORD1, J. SINGLETON1, R.J. NICHOLAS1 et C.T.B. FOXON2

1  The Clarendon Laboratory, Parks Road, GB-Oxford 0X1 3PU, Great-Britain
2  Philips Research Laboratories, GB-Redhill RH1 5HA, Surrey, Great-Britain


Abstract
The behaviour of excitons associated with transitions from the light and heavy hole subbands to the electron subbands has been studied in GaAs-(Ga,Al)As quantum wells, with well widths between 2.2 and 14.5 nm, in strong magnetic fields applied in the plane of the quantum wells. The data are successfully modelled using perturbation theory within an envelope function approximation, enabling the higher subband masses to be deduced : the results are in qualitative agreement with the predictions of pseudopotential calculations. Data taken at low fields with the magnetic field parallel and perpendicular to the well planes also reveal the strong non-parabolicity of the first heavy hole subband close to the decoupled (k=0) limit.