| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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|---|---|---|
| Page(s) | C5-163 - C5-167 | |
| DOI | https://doi.org/10.1051/jphyscol:1987532 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-163-C5-167
DOI: 10.1051/jphyscol:1987532
Department of Physics, Chalmers University of Technology, S-412 96 Göteborg, Sweden
J. Phys. Colloques 48 (1987) C5-163-C5-167
DOI: 10.1051/jphyscol:1987532
OPTICAL STUDY ON BAND EDGE OFFSET IN STRAINED MBE GROWN (InGa)As-GaAs AND (InGa)As-(AlGa)As QUANTUM WELLS
T.G. ANDERSSON, V. KULAKOVSKI, Z.-G. CHEN, A. UDDIN, J. VALLIN et J. WESTINDepartment of Physics, Chalmers University of Technology, S-412 96 Göteborg, Sweden
Abstract
Undoped single and multiple quantum well heterostructures of InxGa1-xAs-GaAs and InxGa1-xAs-Aly Ga1-yAs are investigated by photoluminescence and photoconductivity spectra.The observed conduction-to-valence band offset ratio across the GaAs-strained (InGa) As interface is ƊEc : ƊEv = 0.8:0.2, and is round to be reduced at the AlyGa1-yAs-InxGa1-xAs interface depending on the Al-and In-concentrations.