J. Phys. Colloques
Volume 48, Numéro C5, Novembre 19873rd International Conference on Modulated Semiconductor Structures
|Page(s)||C5-163 - C5-167|
J. Phys. Colloques 48 (1987) C5-163-C5-167
OPTICAL STUDY ON BAND EDGE OFFSET IN STRAINED MBE GROWN (InGa)As-GaAs AND (InGa)As-(AlGa)As QUANTUM WELLST.G. ANDERSSON, V. KULAKOVSKI, Z.-G. CHEN, A. UDDIN, J. VALLIN et J. WESTIN
Department of Physics, Chalmers University of Technology, S-412 96 Göteborg, Sweden
Undoped single and multiple quantum well heterostructures of InxGa1-xAs-GaAs and InxGa1-xAs-Aly Ga1-yAs are investigated by photoluminescence and photoconductivity spectra.The observed conduction-to-valence band offset ratio across the GaAs-strained (InGa) As interface is ƊEc : ƊEv = 0.8:0.2, and is round to be reduced at the AlyGa1-yAs-InxGa1-xAs interface depending on the Al-and In-concentrations.