Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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Page(s) | C5-97 - C5-100 | |
DOI | https://doi.org/10.1051/jphyscol:1987516 |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-97-C5-100
DOI: 10.1051/jphyscol:1987516
1 Laboratoire de Microstructures, CNRS-ESPCI, 10, Rue Vauquelin, F-75005 Paris, France
2 ER 210, CNRS, 1, Place Aristide Briand, F-92190 Meudon, France
3 Centre National d'Etudes des Télécommunications, Département MPA, Route de Trégastel, BP 40, F-22301 Lannion Cedex, France
J. Phys. Colloques 48 (1987) C5-97-C5-100
DOI: 10.1051/jphyscol:1987516
ATOMIC STRUCTURE OF INTERFACES IN GaAs/Ga1-xAlxAs SUPERLATTICES
J.Y. LAVAL1, C. DELAMARRE1, A. DUBON1, G. SCHIFFMACHER2, G. TESTE de SAGEY2, B. GUENAIS3 et A. REGRENY31 Laboratoire de Microstructures, CNRS-ESPCI, 10, Rue Vauquelin, F-75005 Paris, France
2 ER 210, CNRS, 1, Place Aristide Briand, F-92190 Meudon, France
3 Centre National d'Etudes des Télécommunications, Département MPA, Route de Trégastel, BP 40, F-22301 Lannion Cedex, France
Abstract
The free exciton photoluminescence linewidth depends on the distribution and size of the interfacial growth islands. Therefore one sees that the dermination of the atomic structure of the interfaces is greatly needed. We have shown previously that it was possible to visualize atomic steps at the GaAs/AlAs interfaces of MBE grown superlattices along [110] orientation. This paper considers whether it is possible to complete this information by considering the contrast obtained with other orientations on the one hand and with the binary/ternary interfaces on the other hand.