| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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| Page(s) | C5-101 - C5-104 | |
| DOI | https://doi.org/10.1051/jphyscol:1987517 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-101-C5-104
DOI: 10.1051/jphyscol:1987517
Institute of Industrial Science, University of Tokyo 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan
J. Phys. Colloques 48 (1987) C5-101-C5-104
DOI: 10.1051/jphyscol:1987517
DIRECT OBSERVATION OF ATOMIC STEP STRUCTURE AT GaAS-AlAs HETEROINTERFACES IN TRANSMISSION ELECTRON MICROSCOPY AND IMPROVED LATTICE IMAGE TO DETECT THE INTERFACE BY MATERIAL-DEPENDENT PATTERNS
M. TANAKA, H. ICHINOSE, T. FURUTA, Y. ISHIDA et H. SAKAKIInstitute of Industrial Science, University of Tokyo 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan
Abstract
Electron microscopic observation was made on GaAs-AlAs heterointeraces grown by molecular beam epitaxy with accurately controlled layer thickness and growth interruptions for smoothing interface roughness. For [110] electron beam (EB) incidence, a clear lattice image was obtained, in which one-atomic-layer step structure was directly observed at the top (AlAs-on-GaAs) interface. Furthermore, by taking [100] EB incidence and optimizing the observation conditions, we have demonstrated for the first time that GaAs-AlAs interface can be detected in the lattice image not by its contrast but by its characteristic patterns which depend on materials.