| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
|
|
|---|---|---|
| Page(s) | C5-517 - C5-520 | |
| DOI | https://doi.org/10.1051/jphyscol:19875110 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-517-C5-520
DOI: 10.1051/jphyscol:19875110
1 Philipps-Universität, Fachbereich Physik, Renthof 5, D-3550 Marburg, F.R.G.
2 Philips Research Lab., GB-Redhill, RH1 5HA, Surrey, Great-Britain
3 Department of Theor. Physics, Oxford University, GB-Oxford, 0X1 3NP, Great-Britain
J. Phys. Colloques 48 (1987) C5-517-C5-520
DOI: 10.1051/jphyscol:19875110
TEMPERATURE DEPENDENCE OF EXCITON LIFETIMES IN GaAs/AlGaAs MULTI QUANTUM WELLS
G. PETER1, J. FELDMANN1, E.O. GÖBEL1, K. MOORE2, P. DAWSON2, C. FOXON2 et R.J. ELLIOTT31 Philipps-Universität, Fachbereich Physik, Renthof 5, D-3550 Marburg, F.R.G.
2 Philips Research Lab., GB-Redhill, RH1 5HA, Surrey, Great-Britain
3 Department of Theor. Physics, Oxford University, GB-Oxford, 0X1 3NP, Great-Britain
Abstract
The photoluminescence decay times in GaAs/AlGaAs multi quantum well structures with layer thickness between 2.5nm and 15nm are investigated in the temperature range of 5K to 100K. A pronounced increase of the decay times with increasing temperature is found for all samples. This increase of the decay times is attributed to a reduction of the free exciton transition strength due to an increase of the homogeneous linewidth by acoustic phonon scattering.