Numéro
J. Phys. Colloques
Volume 47, Numéro C8, Décembre 1986
EXAFS and Near Edge Structure IV
Page(s) C8-387 - C8-390
DOI https://doi.org/10.1051/jphyscol:1986876
EXAFS and Near Edge Structure IV

J. Phys. Colloques 47 (1986) C8-387-C8-390

DOI: 10.1051/jphyscol:1986876

EXAFS STUDIES OF THERMOSTRUCTURAL AND PHOTOSTRUCTURAL CHANGES OF VAPOR-DEPOSITED AMORPHOUS As2S3 FILMS

C.Y. YANG, J.M. LEE, M.A. PAESLER et D.E. SAYERS

Department of Physics, North Carolina State University, Raleigh, NC 27695-8202, U.S.A.


Abstract
We report the effects of thermal-annealing and light-soaking on the structure of amorphous (a-) As2S3 films. The EXAFS of near-stochiometric films were examined for as-deposited, thermally-annealed and light-soaked samples. The principle As-S feature increases slowly for spectra of all films, while a weak homopolar As-As feature decreases with both thermal-annealing and subsequent light-soaking. Slight changes are also seen in the higher shells. Our results imply that structural changes in a- As2S3 brought about by thermal-annealing and by light-soaking involve breaking, rearranging and remaking a significant fraction of the material's bonds.