| Numéro |
J. Phys. Colloques
Volume 47, Numéro C7, Novembre 1986
33rd International Field Emission Symposium / 33ème Symposium International d'Emission de Champ
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| Page(s) | C7-321 - C7-326 | |
| DOI | https://doi.org/10.1051/jphyscol:1986755 | |
33rd International Field Emission Symposium / 33ème Symposium International d'Emission de Champ
J. Phys. Colloques 47 (1986) C7-321-C7-326
DOI: 10.1051/jphyscol:1986755
1 College of Integrated Arts and Science, University of Osaka Prefecture, Sakai, Osaka 591, Japan
2 The Institute for Solid State Physics (ISSP), The University of Tokyo, Minato-ku, Tokyo 106, Japan
J. Phys. Colloques 47 (1986) C7-321-C7-326
DOI: 10.1051/jphyscol:1986755
AN ATOM-PROBE COMPOSITIONAL STUDY OF Pd-Si INTERFACES
T. SAKATA1, Y. HASEGAWA2, A. KOBAYASHI2 et T. SAKURAI21 College of Integrated Arts and Science, University of Osaka Prefecture, Sakai, Osaka 591, Japan
2 The Institute for Solid State Physics (ISSP), The University of Tokyo, Minato-ku, Tokyo 106, Japan
Abstract
The compositional analysis of thin films of Pd-silicides to the Si substrate has been performed for the first time using an atom-probe field ion microscope. Pd-silicides were grown on Si emitter surfaces at 50 K and 823 K (550 C). It was found that the outermost layer of the films was of pure Si in both cases and that it was followed by Si rich Si-Pd mixed region, PdSi, Pd rich mixed region, Pd2Si and the substrate. The interface reactions were discussed in terms of a substitution model of Si and Pd atoms at the reaction front of the interface.