AP-FIM STUDY OF Si OXIDE AND Si-Si OXIDE INTERFACE

Abstract
The stoichiometry of Si oxide and the structure of Si-Si oxide interface were studied using pulsed-laser stimulated atom-probe field-ion microscope (PL-APFIM). The compositions of native oxide and thermal oxide films were Si:0=1:0.9 and Si:0=1:2, respectively. The interface of the thermal oxide was composed of the transition layer of Si₂O₃, which was thinner than two atomic layers. The oxide layer grown by laser irradiation onto Si clean tip in O₂ gas of 7x10^-2 Pa was also presented.