Numéro |
J. Phys. Colloques
Volume 47, Numéro C2, Mars 1986
32 nd International Field Emission Symposium / 32ème Symposium International d'Emission de Champ
|
|
---|---|---|
Page(s) | C2-437 - C2-442 | |
DOI | https://doi.org/10.1051/jphyscol:1986267 |
32 nd International Field Emission Symposium / 32ème Symposium International d'Emission de Champ
J. Phys. Colloques 47 (1986) C2-437-C2-442
DOI: 10.1051/jphyscol:1986267
Materials Science Section, Department of Mechanical Engineering, Twente University of Technology, NL 7500 AE Enschede, The Netherlands
J. Phys. Colloques 47 (1986) C2-437-C2-442
DOI: 10.1051/jphyscol:1986267
GEOMETRICAL ANALYSIS OF FIELD - ION IMAGES
M.N. CHANDRASEKHARAIAHMaterials Science Section, Department of Mechanical Engineering, Twente University of Technology, NL 7500 AE Enschede, The Netherlands
Abstract
Field - ion microscopy (FIM), transmission electron microscopy (TEM) and computer simulation techniques have been used to experimentally investigate the field - ion image geometry. Electron micrographs and electron diffraction patterns were obtained from tungsten specimens after controlled amounts of field evaporation. From a knowledge of the changes in the image dimensions as a function of the variation in the tip radius and the tip profile from the electron micrographs, an attempt has been made to define the projection point and the ion trajectory. The information has been used to obtain computer simulated patterns and the results are discussed.