| Numéro |
J. Phys. Colloques
Volume 47, Numéro C2, Mars 1986
32 nd International Field Emission Symposium / 32ème Symposium International d'Emission de Champ
|
|
|---|---|---|
| Page(s) | C2-451 - C2-458 | |
| DOI | https://doi.org/10.1051/jphyscol:1986269 | |
J. Phys. Colloques 47 (1986) C2-451-C2-458
DOI: 10.1051/jphyscol:1986269
EXTENDED DEPTH PROFILING WITH THE IAP
S.D. WALCK, T. BUYUKLIMANLI et J.J. HRENDepartment of Materials Science and Engineering, University of Florida, Gainesville. F1 32611, U.S.A.
Abstract
Depth profiling with the FIM/IAP can be extremely accurate if done in conjunction with ring collapse counting. However, under UHV conditions depth scales are not easily assigned, especially if depths of 0.1 µm or more are required, such as those needed for range determinations in ion implantation studies. We describe a method using the IAP signal from the matrix, and tip parameters measured by FIM and transmission electron microscopy (TEM). Ni specimens were do field evaporated to 6 kV. Both FIM and TEM images were recorded before and after the IAP data was collected. The image was observed during analysis and the pulse number recorded when a ring collapsed. Each spectrum was signal -averaged to minimize storage. The pulse number is correlated with the spectral data. The cumulative Ni signal versus the ring number was then generated.