| Numéro |
J. Phys. Colloques
Volume 42, Numéro C6, Décembre 1981
International Conference on Phonon Physics
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|
|---|---|---|
| Page(s) | C6-308 - C6-310 | |
| DOI | https://doi.org/10.1051/jphyscol:1981689 | |
International Conference on Phonon Physics
J. Phys. Colloques 42 (1981) C6-308-C6-310
DOI: 10.1051/jphyscol:1981689
Bell Laboratories, Murray Hill, New Jersey 07974, U.S.A.
J. Phys. Colloques 42 (1981) C6-308-C6-310
DOI: 10.1051/jphyscol:1981689
ABSORPTION OF BALLISTIC PHONONS BY THE 2D ELECTRON GAS IN A Si MOSFET
J.C. Hensel, R.C. Dynes et D.C. TsuiBell Laboratories, Murray Hill, New Jersey 07974, U.S.A.
Abstract
Measurements of the absorption of ballistic phonons by the twodimensional electron gas (2DEG) in the inversion layer of a Si MOSFET are presented and compared with theory.