| Numéro |
J. Phys. Colloques
Volume 42, Numéro C6, Décembre 1981
International Conference on Phonon Physics
|
|
|---|---|---|
| Page(s) | C6-226 - C6-228 | |
| DOI | https://doi.org/10.1051/jphyscol:1981664 | |
International Conference on Phonon Physics
J. Phys. Colloques 42 (1981) C6-226-C6-228
DOI: 10.1051/jphyscol:1981664
1 Bell Laboratories, Murray Hill, New Jersey 07974, U.S.A.
2 Institut für Physik, Universität Dortmund, West-Germany
J. Phys. Colloques 42 (1981) C6-226-C6-228
DOI: 10.1051/jphyscol:1981664
BALLISTIC TRANSPORT AND DECAY OF NEAR ZONE-EDGE NON-THERMAL PHONONS IN SEMICONDUCTORS
R.G. Ulbrich1, 2, V. Narayanamurti1 et M.A. Chin11 Bell Laboratories, Murray Hill, New Jersey 07974, U.S.A.
2 Institut für Physik, Universität Dortmund, West-Germany
Abstract
We present results on the energy transport by near zone-edge transverse phonon pulses generated in the process of non-radiative electronhole pair recombination at T=1.4 K in GaAs and InP. Depending on orientation and distance, ballistic transport of phonons with frequencies between 1.0 and 2 THz is reported.