J. Phys. Colloques
Volume 42, Numéro C6, Décembre 1981International Conference on Phonon Physics
|Page(s)||C6-825 - C6-827|
J. Phys. Colloques 42 (1981) C6-825-C6-827
FILM THICKNESS DEPENDENCE OF HEAT TRANSMISSION INTO HELIUMP. Taborek, M. Sinvani, M. Weimer et D. Goodstein
California Institute of Technology, Pasadena, CA 91125, U. S.A.
A heater is pulsed at the interface between a sapphire crystal and an adsorbed 4He film. For short pulses, the amount of heat absorbed by the film saturates when the film thickness reaches a few layers, just as observed in phonon reflection experiments. For longer pulses, however, there is little difference between thin film and vacuum results, while substantial heat is transferred to the bulk liquid.