| Numéro |
J. Phys. Colloques
Volume 42, Numéro C6, Décembre 1981
International Conference on Phonon Physics
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|---|---|---|
| Page(s) | C6-822 - C6-824 | |
| DOI | https://doi.org/10.1051/jphyscol:19816242 | |
International Conference on Phonon Physics
J. Phys. Colloques 42 (1981) C6-822-C6-824
DOI: 10.1051/jphyscol:19816242
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304, U.S.A.
J. Phys. Colloques 42 (1981) C6-822-C6-824
DOI: 10.1051/jphyscol:19816242
PHONONS OF THE METAL/AMORPHOUS SILICON INTERFACE STUDIED BY INTERFERENCE ENHANCED RAMAN SCATTERING
R.J. Nemanich et C.C. TsaiXerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304, U.S.A.
Abstract
The interference enhanced Raman scattering (IERS) configuration is used to study the initial interfacial interactions of thin films of Pd or Pt on hydrogenated amorphous silicon (a-Si:H). Sharp spectral features are observed in the Raman spectrum of as-deposited Pd on a-Si:H which are-attributed to crystalline Pd2Si. In contrast, for as-deposited Pt on a-Si:H, broad spectral features are observed which are attributed to an intermixed Pt-Si phase.