| Numéro |
J. Phys. Colloques
Volume 42, Numéro C6, Décembre 1981
International Conference on Phonon Physics
|
|
|---|---|---|
| Page(s) | C6-484 - C6-486 | |
| DOI | https://doi.org/10.1051/jphyscol:19816141 | |
International Conference on Phonon Physics
J. Phys. Colloques 42 (1981) C6-484-C6-486
DOI: 10.1051/jphyscol:19816141
1 RCA Laboratories, Princeton, U.S.A.
2 RCA Laboratories, Tokyo, Japan.
J. Phys. Colloques 42 (1981) C6-484-C6-486
DOI: 10.1051/jphyscol:19816141
OPTICAL-MODE DEFORMATION POTENTIAL
R.C. Alig1, S. Bloom1 et M. Inoue21 RCA Laboratories, Princeton, U.S.A.
2 RCA Laboratories, Tokyo, Japan.
Abstract
From measurements in the literature of the average energies, ε, required to create electron-hole pairs with ionizing radiation in several semiconductors, a value of the optical-mode deformation-potential constant, KDt, has been obtained. A recent analysis has been extended to include scattering by the polar-mode electron-phonon interaction as well as by the optical-mode deformation potential. Expressions for these scattering rates were developed in the free-particle approximation. The only unknown in the ratio of these rates is KDt. These values are KDt = 1.8 x 108 x √ρeV/cm, where ρ is the semiconductor density in gm/cm3.