| Numéro |
J. Phys. Colloques
Volume 42, Numéro C6, Décembre 1981
International Conference on Phonon Physics
|
|
|---|---|---|
| Page(s) | C6-487 - C6-489 | |
| DOI | https://doi.org/10.1051/jphyscol:19816142 | |
International Conference on Phonon Physics
J. Phys. Colloques 42 (1981) C6-487-C6-489
DOI: 10.1051/jphyscol:19816142
Max-Planck-Institut für Festkörperforschung, Heinsenbergstr. 1, 7000 Stuttgart 80, F.R.G.
J. Phys. Colloques 42 (1981) C6-487-C6-489
DOI: 10.1051/jphyscol:19816142
ABSOLUTE CROSS SECTIONS FOR ONE-PHONON RAMAN SCATTERING FROM SEVERAL INSULATORS AND SEMICONDUCTORS
J.M. Calleja, H. Vogt et M. CardonaMax-Planck-Institut für Festkörperforschung, Heinsenbergstr. 1, 7000 Stuttgart 80, F.R.G.
Abstract
Using the Brillouin-Raman method we have measured the Raman scattering efficiencies for the Ɖ phonons of GaP, ZnTe, ZnSe, ZnS as well as CaF2, SrF2, BaF2. The results for the zincblende-type materials allow us to calibrate in absolute scattering efficiency units the resonance Raman curves found in the literature. From the calibrated resonances the deformation potential do is deduced on the basis of a parabolic band model. For the fluorides the scattering efficiency is attributed to the adge exciton. The deformation potential of the Ɖ15 valence band following from this interpretation is compared with pseudopotential and LCAO calculations.