| Numéro |
J. Phys. Colloques
Volume 42, Numéro C6, Décembre 1981
International Conference on Phonon Physics
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|---|---|---|
| Page(s) | C6-453 - C6-455 | |
| DOI | https://doi.org/10.1051/jphyscol:19816131 | |
International Conference on Phonon Physics
J. Phys. Colloques 42 (1981) C6-453-C6-455
DOI: 10.1051/jphyscol:19816131
Department of Physics, Kansas State University, Manhattan, Kansas 66506, U.S.A.
J. Phys. Colloques 42 (1981) C6-453-C6-455
DOI: 10.1051/jphyscol:19816131
PULSED RAMAN MEASUREMENTS OF INHIBITED ELECTRON-PHONON COUPLING AT HIGH PLASMA DENSITIES IN SILICON
A. Compaan, H.W. Lo, M.C. Lee et A. AydinliDepartment of Physics, Kansas State University, Manhattan, Kansas 66506, U.S.A.
Abstract
A 15 nsec duration, frequency doubled Nd : YAG laser at power densities near 1 J/cm2 has been used to create high plasma densities in silicon at room temperature. Phonon Raman scattering generated by a delayed 7 nsec dye laser probe pulse shows lattice temperatures far below the silicon melting temperature of 1412°C. The results suggest the presence of a dense-plasma-induced phase transition with a greatly inhibited electron-lattice coupling.