| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|
|
|---|---|---|
| Page(s) | C4-375 - C4-378 | |
| DOI | https://doi.org/10.1051/jphyscol:1981480 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-375-C4-378
DOI: 10.1051/jphyscol:1981480
1 Gould Inc., Rolling Meadows, IL 60008
2 Department of Physics and James Franck Institute, the University of Chicago, Chicago, IL 60637, U.S.A.
J. Phys. Colloques 42 (1981) C4-375-C4-378
DOI: 10.1051/jphyscol:1981480
PHOTO-CREATION OF DEFECTS IN PLASMA-DEPOSITED a-Si:H
M.H. Tanielian1, N.B. Goodman2 and H. Fritzsche21 Gould Inc., Rolling Meadows, IL 60008
2 Department of Physics and James Franck Institute, the University of Chicago, Chicago, IL 60637, U.S.A.
Abstract
We show that the increase in the density of gap states N(E) resulting from the photocreation of defects in plasma-deposited a-Si:H can be measured by the field effect and by the conductance change due to surface adsorbates. A simple model is presented which explains the doping dependence of the magnitude and the sign of the light-induced conductance changes.