Numéro
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
Page(s) C4-353 - C4-356
DOI https://doi.org/10.1051/jphyscol:1981475
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors

J. Phys. Colloques 42 (1981) C4-353-C4-356

DOI: 10.1051/jphyscol:1981475

PHONON DENSITIES OF STATES AND EIGENVECTORS IN HYDROGENATED AND FLUORINATED AMORPHOUS SILICON

W.B. Pollard and G. Lucovsky

Department of Physics, North Carolina State University, Raleigh, NC 27650, U.S.A.


Abstract
A study of the vibrational properties of amorphous silicon alloys is presented. Using the Cluster-Bethe-lattice method and isolated cluster calculations, local densities of states spectra and eigenvectors are calculated. Our results indicate that all of the vibrational modes associated with H and F in the alloys exhibit a localized character : those above 500 cm-1 are localized predominantly on the H or F sites, while those below are in-band resonances and localized within the first three layers of Si-atoms.