| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-331 - C4-334 | |
| DOI | https://doi.org/10.1051/jphyscol:1981470 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-331-C4-334
DOI: 10.1051/jphyscol:1981470
1 D.R.F. Resonance Magnétique, Centre d'Etudes Nucléaire de Grenoble, 85X, 38041 Grenoble Cedex, France.
2 L.E.T.I. Nouveaux Composants Electroniques, Centre d'Etudes Nucléaire de Grenoble, 85X, 38041 Grenoble Cedex, France
J. Phys. Colloques 42 (1981) C4-331-C4-334
DOI: 10.1051/jphyscol:1981470
A NO-STOKES SHIFT MODEL FOR THE PHOTOLUMINESCENCE OF a-Si:H
D. J. Dunstan1 and F. Boulitrop21 D.R.F. Resonance Magnétique, Centre d'Etudes Nucléaire de Grenoble, 85X, 38041 Grenoble Cedex, France.
2 L.E.T.I. Nouveaux Composants Electroniques, Centre d'Etudes Nucléaire de Grenoble, 85X, 38041 Grenoble Cedex, France
Abstract
From the close similarity of the absorption and excitation spectra below the gap, we deduce that there is no significant Stokes shift in the luminescence of a-Si:H. We propose a model for the zero-phonon states which accounts for the luminescence and the absorption spectrum in terms of disorder related fluctuations of the band-gap.