| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-213 - C4-216 | |
| DOI | https://doi.org/10.1051/jphyscol:1981444 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-213-C4-216
DOI: 10.1051/jphyscol:1981444
Institute of Physics and Technology of Materials, Bucharest, P.O. Box MG-7, Romania
J. Phys. Colloques 42 (1981) C4-213-C4-216
DOI: 10.1051/jphyscol:1981444
REFLECTION SAXS INVESTIGATION OF AMORPHOUS THIN FILMS
R. ManailaInstitute of Physics and Technology of Materials, Bucharest, P.O. Box MG-7, Romania
Abstract
The present work points out the advantages of a reflection variant of small-angle X-ray scattering(RSAXS) in the study of amorphous thin films.The method is applied to amorphous Mox(a-Ge)1-x films (0.07≤x≥0.32), allowing the determination of the size distribution and magnitude of the compositional fluctuations.