Issue
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
Page(s) C4-213 - C4-216
DOI https://doi.org/10.1051/jphyscol:1981444
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors

J. Phys. Colloques 42 (1981) C4-213-C4-216

DOI: 10.1051/jphyscol:1981444

REFLECTION SAXS INVESTIGATION OF AMORPHOUS THIN FILMS

R. Manaila

Institute of Physics and Technology of Materials, Bucharest, P.O. Box MG-7, Romania


Abstract
The present work points out the advantages of a reflection variant of small-angle X-ray scattering(RSAXS) in the study of amorphous thin films.The method is applied to amorphous Mox(a-Ge)1-x films (0.07≤x≥0.32), allowing the determination of the size distribution and magnitude of the compositional fluctuations.