| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-1081 - C4-1083 | |
| DOI | https://doi.org/10.1051/jphyscol:19814237 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-1081-C4-1083
DOI: 10.1051/jphyscol:19814237
1 Faculté des Sciences de Luminy, Département de Physique, Case 901, 13288 Marseille Cedex 9, France
2 ERA C.N.P.S. 070373
3 ERA C.N.R.S. 070899
J. Phys. Colloques 42 (1981) C4-1081-C4-1083
DOI: 10.1051/jphyscol:19814237
AES AND EELS MEASUREMENTS ON THE Si-Au-Ag INTERFACE
A. Cros1, 2, F. Salvan1, 2 and J. Derrien1, 31 Faculté des Sciences de Luminy, Département de Physique, Case 901, 13288 Marseille Cedex 9, France
2 ERA C.N.P.S. 070373
3 ERA C.N.R.S. 070899
Abstract
Surface techniques under UHV conditions have been applied to the study of the Si-Au-Ag interface. The gold layer induces strong structural modifications : some silicon atoms diffuse into the silver layer which is found amorphous. This is in contrast with the non diffusive Si-Ag interface where ordered structures are observed.