J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|Page(s)||C4-975 - C4-978|
J. Phys. Colloques 42 (1981) C4-975-C4-978
DIFFUSION KINETICS IN GOLD-AMORPHOUS GeTe4 THIN FILMSJ.M. Mackowski1, M. Bendali1, P. Normandon1 and P. Kumurdjian2
1 Institut de Physique Nucléaire (and IN2P3), Université Lyon-1, 43, Bd du 11 Novembre 1918 - 69622 Villeurbanne Cedex, France
2 C.E.A. Bruyères-le-Châtel, C.E.A., B.P. 561, 92542 Montrouge Cedex, France
The main processes which occur during the gold fast diffusion into amorphous GeTe4 films are followed by RBS measurements, for annealings carried out at temperatures below Tg (140°C). From the profiles obtained, strikingly similar to grain-boundary (G.B.) profiles, we extract the diffusion coefficients for low-concentration kinetics using specific G.B. theories. Then we present a model based on recent trends in amorphous structures. This model is also consistent with experimental data obtained from complementary characterizations as electron microscopy X-ray and transport properties.