| Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-975 - C4-978 | |
| DOI | https://doi.org/10.1051/jphyscol:19814214 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-975-C4-978
DOI: 10.1051/jphyscol:19814214
1 Institut de Physique Nucléaire (and IN2P3), Université Lyon-1, 43, Bd du 11 Novembre 1918 - 69622 Villeurbanne Cedex, France
2 C.E.A. Bruyères-le-Châtel, C.E.A., B.P. 561, 92542 Montrouge Cedex, France
J. Phys. Colloques 42 (1981) C4-975-C4-978
DOI: 10.1051/jphyscol:19814214
DIFFUSION KINETICS IN GOLD-AMORPHOUS GeTe4 THIN FILMS
J.M. Mackowski1, M. Bendali1, P. Normandon1 and P. Kumurdjian21 Institut de Physique Nucléaire (and IN2P3), Université Lyon-1, 43, Bd du 11 Novembre 1918 - 69622 Villeurbanne Cedex, France
2 C.E.A. Bruyères-le-Châtel, C.E.A., B.P. 561, 92542 Montrouge Cedex, France
Abstract
The main processes which occur during the gold fast diffusion into amorphous GeTe4 films are followed by RBS measurements, for annealings carried out at temperatures below Tg (140°C). From the profiles obtained, strikingly similar to grain-boundary (G.B.) profiles, we extract the diffusion coefficients for low-concentration kinetics using specific G.B. theories. Then we present a model based on recent trends in amorphous structures. This model is also consistent with experimental data obtained from complementary characterizations as electron microscopy X-ray and transport properties.