| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-971 - C4-974 | |
| DOI | https://doi.org/10.1051/jphyscol:19814213 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-971-C4-974
DOI: 10.1051/jphyscol:19814213
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
J. Phys. Colloques 42 (1981) C4-971-C4-974
DOI: 10.1051/jphyscol:19814213
A NEW CHALCOGENIDE PHOTOCONDUCTOR FOR A DIODE LASER BEAM PRINTER
Y. Taniguchi, H. Yamamoto, S. Horigome, S. Saito and E. MaruyamCentral Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
Abstract
A highly sensitive photoconductive layer with low dark decay has been fabricated for electrophotography using Se-As-Te amorphous chalcogenide. This photoconductor consists of four layers : a Se-rich blocking layer, a Te-rich ir-sensitive layer, an As-rich space-charge layer and a Se-rich voltage-sustaining layer. It has a sensitivity to beams having a wavelength of 750 nm almost as high as that of pure Se at a wavelength of 442 nm.