Numéro
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
Page(s) C4-967 - C4-969
DOI https://doi.org/10.1051/jphyscol:19814212
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors

J. Phys. Colloques 42 (1981) C4-967-C4-969

DOI: 10.1051/jphyscol:19814212

ARSENIC SULPHIDE AS EVAPORATED DRY PHOTORESIST

A. Buroff

Central Laboratory of Photographic Processes, Bulgarian Academy of Sciences, 1040 Sofia, Bulgaria


Abstract
Most amorphous substances change their physical and chemical properties on illumination. The photosensitive solubility permits the use of amorphous arsenic sulphide as evaporated photoresist. An appropriate solvent was found which fully dissolves the exposed areas without affecting the unexposed ones. Thus extremely thin layers of evaporated amorphous arsenic sulphide can be used as sensitive photoresist with high resolution for the production of chromium masks and sensitized offset printing plates.