Numéro
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
Page(s) C4-959 - C4-962
DOI https://doi.org/10.1051/jphyscol:19814210
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors

J. Phys. Colloques 42 (1981) C4-959-C4-962

DOI: 10.1051/jphyscol:19814210

CONTACT EFFECTS OF METALS ON CHALCOGENIDE AMORPHOUS FILMS

S. Okano, M. Suzuki and H. Suzuki

Faculty of Technology, Kanazawa University, Kanazawa 920, Japan


Abstract
Several metals with strong ionization tendency were found to form rectifying contacts with chalcogenide amorphous films. Measurements of frequency dependences of parallel capacitance and resistance of sandwich-type samples of Metal (I) / amorphous film / Metal(II) revealed that rectifying effects were due to the formation of a high resistivity layer with large thickness, which was thought to be caused by a chemical reaction at the interface.