| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-915 - C4-918 | |
| DOI | https://doi.org/10.1051/jphyscol:19814199 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-915-C4-918
DOI: 10.1051/jphyscol:19814199
S.M. Kirov Kazakh State University, 480091, Alma-Ata, U.R.S.S.
J. Phys. Colloques 42 (1981) C4-915-C4-918
DOI: 10.1051/jphyscol:19814199
RADIATION-INDUCED DEFECTS FORMATION IN CHALCOGENIDE GLASSES
Sh.Sh. Sarsembinov, E.E. Abdulgafarov and K. TolkanchinovS.M. Kirov Kazakh State University, 480091, Alma-Ata, U.R.S.S.
Abstract
High-energy (2Mev) electron irradiation may produce excess density of valence-alternation pairs (VAP's) in chalcogenide glasses. Relativistic electron energy losses and non-equilibrium density of radiation-induced "atomic shift" defects in vitreous As2S3 and As2S3 are calculated. Radiation-induced defects formation scheme is proposed and compared with positron annihilation data. It is shown that radiation-induced defects may cause essential changes in electrical and optical properties of chalcogenide glasses.