| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-835 - C4-838 | |
| DOI | https://doi.org/10.1051/jphyscol:19814184 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-835-C4-838
DOI: 10.1051/jphyscol:19814184
Naval Research Laboratory, Washington, D.C. 20375, U.S.A.
J. Phys. Colloques 42 (1981) C4-835-C4-838
DOI: 10.1051/jphyscol:19814184
TEMPERATURE AND FREQUENCY DEPENDENCES OF NMR SPIN-LATTICE RELAXATION TIME T1 IN a-Si : H
K.L. NgaiNaval Research Laboratory, Washington, D.C. 20375, U.S.A.
Abstract
Carlos and Taylor have recently reported pulsed 1H NMR measurements on the spin-lattice relaxation time T1 for the hydrogen atoms in glow discharge prepared a-Si : H. They have measured both the magnitude and the temperature and frequency dependences of T1 and observed a number of interesting features. Among these are the presence of an asymmetric minimum in T1 at a temperature Tmin near 40K which is relatively insensitive to frequency ν0 and a strong dependence of T1 on ν0 for T < Tmin which is suppressed for T > Tmin. These features are consistent with a unified and universal model of low frequency fluctuation, dissipation and relaxation properties of condensed matter.