| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|
|
|---|---|---|
| Page(s) | C4-663 - C4-666 | |
| DOI | https://doi.org/10.1051/jphyscol:19814146 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-663-C4-666
DOI: 10.1051/jphyscol:19814146
Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
J. Phys. Colloques 42 (1981) C4-663-C4-666
DOI: 10.1051/jphyscol:19814146
ELECTRICAL PROPERTIES AND PHOTOLUMINESCENCE OF AMORPHOUS SILICON
X.B. Liao, G.L. Kong, X.R. Yang, P.D. Wang, Y.Q. Chao, Z.M. Chen and C.L. LiuInstitute of Semiconductors, Chinese Academy of Sciences, Beijing, China
Abstract
The temperature dependence of conductivity, photoluminescence and ion-implantation doping effect of glow discharge (GD) and low pressure CVD a-Si films have been investigated. Post-hydrogenation significantly reduces the gap state density of LPCVD a-Si. Phosphorus and boron ion-implantation show that LPCVD a-Si has a higher doping efficiency than GD samples, reaching a maximum R.T. conductivity of 0.3 Ω-1 cm-1. Two peaks were observed in the luminescence spectrum of GD a-Si films and the origin of the peaks is discussed.